C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.4, 148/3.8
C30B 29/42 (2006.01)
Patent
CA 1200468
CRYSTAL OF GERMANIUM AND GALLIUM ARSENIDE Abstract A crystal of Ga(1-0.5x)Gex As(1-0.5x). The crystals are grown by epitaxial chemical vapor deposition with varying concentrations of the germanium which may be positioned on either or both the gallium and the arsenic sites in the respective sublattices.
375113
Marinace John C.
Wilkie Earl L.
International Business Machines Corporation
Rosen Arnold
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