H - Electricity – 03 – B
Patent
H - Electricity
03
B
331/55
H03B 5/36 (2006.01) H03B 1/00 (2006.01) H03B 7/06 (2006.01)
Patent
CA 2015484
A first transistor is connected in grounded-collector-emitter- follower configuration to generate a high enough negative resistance to overcome the oscillating resistance of the crystal resonator connected to the base electrode. A second transistor connected in grounded-base configuration serves as a buffer and impedance transformer between the low impedance output of the first transistor and the high impedance of a load. An inductor connected between the resonator and the first transistor input and a variable capacitance approximating the shunt capacitance of the resonator connected across the first transistor input form an impedance inverter which absorbs the resonator shunt capacitance and converts the effect of the resonator to a parallel tuned circuit that can be broadly tuned.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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