Crystal production method

Details Crystal production method Crystal production method

H - Electricity

01

L

H01L 21/20 (2006.01) C23C 16/34 (2006.01) C30B 25/18 (2006.01) C30B 29/38 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2475966

A method for growing a crystal (for example, a GaN compound semiconductor crystal) on a substrate, comprising the steps of forming a first crystal layer (GaN buffer layer), a second crystal layer (GaN intermediate layer), and a third crystal layer (GaN thick-film layer). In the three steps, the crystal layers are formed under different conditions, respectively.

L'invention concerne un procédé de formation d'un cristal (par exemple un cristal semi-conducteur GaN) sur un substrat, consistant à former une première couche cristalline (couche tampon GaN), une deuxième couche cristalline (couche intermédiaire GaN), et une troisième couche cristalline (couche épaisse GaN). Les couches cristallines sont respectivement formées, au cours de ces trois étapes, dans différentes conditions.

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