B - Operations – Transporting – 01 – J
Patent
B - Operations, Transporting
01
J
B01J 3/06 (2006.01) C01G 15/00 (2006.01)
Patent
CA 2385713
A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride (15); providing mineralizer (17); providing solvent (17); providing a capsule (10); disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell (1); and subjecting the pressure cell to high pressure and high tempeature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and re-precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.
Procédé de croissance de nitrure de gallium permettant de former du nitrure de gallium cristallin. Le procédé consiste à fournir du nitrure de gallium de source (15), un minéralisateur (17), un solvant (17) et une capsule (10), à disposer ces nitrure de gallium de source, minéralisateur et solvant dans la capsule, à sceller cette capsule, à la disposer dans une cellule de pression (1) puis à soumettre cette dernière à des conditions de pression et de température élevées (HPHT) pendant un temps suffisant pour dissoudre le nitrure de gallium source et précipiter de nouveau le nitrure de gallium source sous la forme d'au moins un cristal de nitrure de gallium. L'invention concerne aussi des cristaux de nitrure de gallium formés au moyen du procédé de l'invention.
D'evelyn Mark Philip
Narang Kristi Jean
Company General Electric
Craig Wilson And Company
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