Crystalline sio in2 xx-modification and its preparation

Details Crystalline sio in2 xx-modification and its preparation Crystalline sio in2 xx-modification and its preparation

C - Chemistry, Metallurgy

01

B

23/192, 252/34

C01B 33/12 (2006.01) C01B 37/02 (2006.01)

Patent

CA 1153868

ABSTRACT OF THE DISCLOSURE: The present invention is concerned with a crystal- line SiO2-modification, which is characterized by an X-ray diffraction diagram having certain diffraction lines, and with a process for the preparation of this crystalline SiO2-modifi- cation. This process is achieved by heating a mixture of a reactive amorphous SiO2 in an aqueous solution of hexamethylene- diamine at a temperature of from 100° to 200°C for from 0.5 to 50 days, to effect crystallization of the SiO2 to the crystal- line SiO2-modification. Sodium ions, phosphate ions and /or sulfate ions may be added for the crystallization. With the novel process it is possible to prepare new , high-grade absorbents which have a definite pore size and are therefore particularly suitable for the selective separation of organic components from solvents.

346042

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