Crystallization of grain boundary phases in silicon carbide...

Details Crystallization of grain boundary phases in silicon carbide... Crystallization of grain boundary phases in silicon carbide...

C - Chemistry, Metallurgy

04

B

C04B 35/563 (2006.01) C04B 35/573 (2006.01) C04B 35/575 (2006.01) C04B 35/58 (2006.01) C04B 35/65 (2006.01)

Patent

CA 2152364

A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300° to 2100°C under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.

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