C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.3
C23C 14/06 (2006.01) C04B 35/5831 (2006.01)
Patent
CA 1157806
CUBIC BORON NITRIDE PREPARATION ABSTRACT A deposit of cubic boron nitride is placed on a substrate by an activated reactive evaporation method. The method includes: supporting and heating a substrate in vacuum; evaporating metal vapors into a zone between the substrate and the metals alloy source from a metals alloy source consisting essentially of at least 60 percent by weight to balance of boron with from 2 to 12 percent by weight of aluminum and at least 0.2 to 24 percent by weight of at least one of cobalt, nickel, manganese, or other aluminide forming element; introducing ammonia gas into the zone; and generating an electrical field in the zone for ionizing the metal vapors and gas atoms in the zone. In the method the substrate generally is heated to a temperature of at least 300° C. with preferred substrate temperatures between about 500° C. and 1100° C., the ammonia gas pressure preferably is about 1 x 10-4 torr to 8 x 10-3 torr, and a plasma activation in the zone desirably may be provided by employing a deflection electrode maintained at a positive voltage potential and positioned between the substrate and the source of evaporating metal vapors.
374810
Battelle Development Corporation
Fetherstonhaugh & Co.
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