H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/142, 345/5,
H01L 21/469 (2006.01) H01L 21/316 (2006.01) H01L 21/768 (2006.01) H01L 23/29 (2006.01)
Patent
CA 1339817
A method of producing insulating layers over a semiconductor substrate comprising spinning a film of spin-on-glass (SOG) over a semiconductor substrate, precuring the film of SOG at an elevated temperature sufficient to remove the bulk of solvent and curing the film of SOG in a plasma in a plasma reactor of a type exhibiting a self-biased RF discharge adjacent the SOG for a period of time sufficient to exclude the bulk of SiOH, organic volatiles and H2O from the layer.
601333
Mitel Corporation
Shapiro Cohen
Zarlink Semiconductor Inc.
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