Curing and passivation of spin-on-glasses by a plasma...

H - Electricity – 01 – L

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356/142, 345/5,

H01L 21/469 (2006.01) H01L 21/316 (2006.01) H01L 21/768 (2006.01) H01L 23/29 (2006.01)

Patent

CA 1339817

A method of producing insulating layers over a semiconductor substrate comprising spinning a film of spin-on-glass (SOG) over a semiconductor substrate, precuring the film of SOG at an elevated temperature sufficient to remove the bulk of solvent and curing the film of SOG in a plasma in a plasma reactor of a type exhibiting a self-biased RF discharge adjacent the SOG for a period of time sufficient to exclude the bulk of SiOH, organic volatiles and H2O from the layer.

601333

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