Current confinement for a vertical cavity surface emitting...

H - Electricity – 01 – S

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H01S 5/183 (2006.01) H01S 5/042 (2006.01) H01S 5/20 (2006.01)

Patent

CA 2257888

A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest from the substrate, to provide current confinement with the gain region, and having an active region and another minor formed subsequent to the implantation or diffusion. This structure has an implantation or diffusion that does not damage or detrimentally affect the gain region, and does provide dimensions of current confinement that are accurately ascertained. Alternatively, the implantation or diffusion for current confinement may be placed within the top mirror, and several layers above the active region, still with minimal damage to the gain region and having a well-ascertained current confinement dimension.

L'invention porte sur laser à émission par la surface à cavité verticale présentant une structure plane et comportant une implantation ou une diffusion au sommet du miroir le plus près possible du substrat, ou à la base du miroir et le plus loin possible du substrat, afin de confiner le courant dans la zone de gain, et présentant une zone active ou un autre miroir formé après l'implantation ou la diffusion. Cette structure présente une implantation ou une diffusion qui n'endommage ni n'affecte négativement la zone de gain et n'établit pas de dimensions de confinement du courant déterminées avec précision. Dans une variante, l'implantation ou la diffusion servant au confinement du courant peuvent être placées dans le miroir du haut, plusieurs couches au dessus de la zone active, là encore avec un faible dommage à la zone de gain, et avec des dimensions du confinement de courant bien précisées.

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