Current confinement in semiconductor devices

Details Current confinement in semiconductor devices Current confinement in semiconductor devices

H - Electricity

01

L

356/147

H01L 21/00 (2006.01) H01L 33/00 (2006.01) H01S 5/20 (2006.01)

Patent

CA 1110367

CURRENT CONFINEMENT IN SEMICONDUCTOR DEVICES Abstract of the Disclosure Current confinement in semiconductor device by means of buried high resistivity zones is described. For example, in a stripe geometry, semiconductor, junction laser the laterally separate, high resistivity zones, which confine current flow in a narrow channel between the upper and lower electrical contacts, are buried below the upper contact. This configuration permits current to flow from the upper contact into the body of the semiconductor over greatly increased area before it enters the channel. The current density at the interface between the upper contact and the semiconductor body is thereby reduced, making the quality of that interface less important. Several processes which employ proton bombard- ment for fabricating the laser are also described: (1) in one the normal sequence of Zn diffusion and proton bombardment is reversed, and (2) in the other the profiles of Zn doping and proton damage are suitably tailored. - i -

296524

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