Cvd diamond by alternating chemical reactions

Details Cvd diamond by alternating chemical reactions Cvd diamond by alternating chemical reactions

C - Chemistry, Metallurgy

30

B

C30B 25/00 (2006.01) C01B 31/06 (2006.01) C23C 16/27 (2006.01) C30B 25/02 (2006.01)

Patent

CA 2049673

60SD00543 CVD DIAMOND BY ALTERNATING CHEMICAL REACTIONS ABSTRACT OF THE DISCLOSURE The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula CnXm and then with a gas having the formula C1Zp. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z-X bond is stronger than the C-X bond and also is stronger than the C-Z bond. In the formulas, n, m, 1, and p are integers. If CnXm and C1Zp do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.

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