Cvd diamond growth on hydride-forming metal substrates

C - Chemistry – Metallurgy – 30 – B

Patent

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C30B 29/04 (2006.01) C23C 16/01 (2006.01) C23C 16/27 (2006.01)

Patent

CA 2082711

GEMAT 15 (60-SD-595) Abstract of the Disclosure A method for producing CVD diamond film on a substrate comprised of a hydride-forming metal is provided. The substrate provides for easy release of the CVD diamond coating formed thereon upon exposure to a hydrogen pressure. Self-supporting CVD diamond films of large dimension are easily obtained without dissolving the substrate. The substrate can be used in conventional CVD reactors.

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