C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C23C 16/01 (2006.01) C23C 16/27 (2006.01)
Patent
CA 2082711
GEMAT 15 (60-SD-595) Abstract of the Disclosure A method for producing CVD diamond film on a substrate comprised of a hydride-forming metal is provided. The substrate provides for easy release of the CVD diamond coating formed thereon upon exposure to a hydrogen pressure. Self-supporting CVD diamond films of large dimension are easily obtained without dissolving the substrate. The substrate can be used in conventional CVD reactors.
Anthony Thomas R.
Kosky Philip G.
Anthony Thomas R.
Company General Electric
Craig Wilson And Company
Kosky Philip G.
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