C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/34 (2006.01) C23C 14/35 (2006.01) H01J 37/34 (2006.01)
Patent
CA 2153795
A rotating cylindrical sputtering target surface (29) as part of a magnetron has cylindrical shields (70) adjacent each end of the target (29) that are shaped at their respective inner edges (70) to maximize etching and to prevent condensation and subsequent arcing that undesirably occurs when certain materials, particularly dielectrics, are being sputtered. If two or more rotating targets (29) are employed in a single magnetron system, each is similarly shielded. In an alternative form, the target (29) is provided with a single cylindrical shield (69) that is cut away for a significant portion of the distance around the cylinder to provide an opening through which a sputtering region of the target is accessible, while maintaining shielding of the target end regions. This alternative single shield (69) is similarly shaped at portions of its inner edges adjacent to the opening to maximize etching and to prevent undesired condensation and subsequent arcing. The preferred shield structure (69) is rotatable in order to allow the position of the sputtering activity to be selected.
Porter John R.
Sieck Peter A.
Gowling Lafleur Henderson Llp
The Boc Group Inc.
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