Darlington transistor device

Details Darlington transistor device Darlington transistor device

H - Electricity

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L

356/30

H01L 27/02 (2006.01) H01L 27/07 (2006.01) H01L 27/082 (2006.01)

Patent

CA 1081367

DARLINGTON TRANSISTOR DEVICE Abstract of the Disclosure In a device of the Darlington type providing a connection of transistors formed on a monolithic substrate there is a collector region of a first conductivity type and a base region of the second conductivity type forming a P-N junction. The base region contains at least two emitter regions which are simultaneously formed therein with a space between them. They have the same conductivity type as each other, which is opposite to that of the base region. The improvement comprises the provision of an obstruction region having the same conductivity as the emitter regions and located in the space between them. The depth of the obstruction region is larger than that of said emitter regions whereby a narrow path is formed between the collector-base P-N junction and the P-N junction formed between the obstruc- tion region and the base region. This path functions as a bias resistor connected between the bases of the transistors of sufficiently high resistance value to give the device satisfactory characteristics.

271388

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