Data writing to non-volatile memory

G - Physics – 11 – C

Patent

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Details

G11C 16/06 (2006.01) G06F 11/14 (2006.01) G06K 19/07 (2006.01) G07F 7/08 (2006.01) G07F 7/10 (2006.01) G11C 16/10 (2006.01)

Patent

CA 2137683

A method of writing data to non-volatile memory such as electrically erasable programmable read only memory (EEPROM) in a smart card provides a write status region of EEPROM which is examined on each reset of the card. If the preceding write operation was unsuccessful, perhaps because of deliberate manipulation of the card, a recovery procedure is implemented. If recovery is successful the card application can be run. Otherwise the card is unusable.

Procédé d'écriture de données dans une mémoire rémanente telle qu'une mémoire morte programmable effaçable électriquement (EEPROM) sur une carte à microprocesseur, selon lequel on utilise une zone d'écriture de l'EEPROM qui est examinée lors de chaque remise à l'état initial de la carte. Si la précédente opération d'écriture a échoué peut-être en raison d'une manipulation délibérée de la carte, une procédure de récupération est mise en oeuvre. Si la récupération est bonne on peut utiliser la carte, dans le cas contraire la carte est inutilisable.

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