Deep u.v. photoresist compositions containing polycyclic...

G - Physics – 03 – F

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G03F 7/016 (2006.01) C07C 245/12 (2006.01) G03F 7/021 (2006.01) G03F 7/038 (2006.01) G03F 7/26 (2006.01)

Patent

CA 2019555

Abstract Photosensitizers containing saturated and unsaturated polycyclic compounds containing thc cyclopentane-2-diazo-1,3-dione structural unit. These compounds have their maximum u.v. absorption at around 248 nm, decompose into polar products upon irradiation, and can be used as photoscnsitlzcrs in positive deep u.v. or excimer laser (248 nm) lithography. They are most preferably useful with deep u.v. transparent resins for forming photoresists.

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