G - Physics – 03 – F
Patent
G - Physics
03
F
356/118
G03F 1/00 (2006.01)
Patent
CA 1242815
DEFECT DETECTION METHOD OF SEMICONDUCTOR WAFER PATTERNS Abstract of the Disclosure A method of detecting opaque defects on a reticle used to define die patterns during semiconductor device fabrication in which a comparison is made of reflected light levels between an image die containing the developed photo-sensitive resist of a top layer with a reference die which contains only previously formed layers. The comparison is limited to areas of the device where there is no image pattern formed by the resist. A defect is detected whenever there is a difference in the recorded levels detected during the comparison. - i -
532675
Mowle John E.
Nortel Networks Limited
LandOfFree
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