Defect free epitaxially grown silicon and method of...

Details Defect free epitaxially grown silicon and method of... Defect free epitaxially grown silicon and method of...

H - Electricity

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356/151

H01L 21/20 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1277778

DEFECT FREE EPITAXIALLY GROWN SILICON AND METHOD OF PRODUCING SAME ABSTRACT OF THE DISCLOSURE A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxida- tion of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

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