Defining a low-density pattern in a photoresist with an...

Details Defining a low-density pattern in a photoresist with an... Defining a low-density pattern in a photoresist with an...

H - Electricity

01

L

356/136

H01L 21/26 (2006.01) H01J 37/317 (2006.01)

Patent

CA 1123120

Abstract of the Disclosure The present invention relates to a method of operating a raster-scan-mode-of-operation electron beam lithographic system to irradiate a workpiece that is supported on a continuously moving table. The method is characterized by the step of generating deflection signals that in effect exactly compensate for both table motion and the regular raster scan deflection signals of the system to cause the electron beam to dwell only on each of multiple selected portions of a low-density pattern for a time that is substantially greater than the time during which each portion would be exposed during regular raster scanning of the surface of the workpiece.

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