C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
149/17, 148/2.8
C23F 1/02 (2006.01) H01L 21/00 (2006.01) H01L 21/3213 (2006.01) H01L 29/00 (2006.01)
Patent
CA 1050866
ABSTRACT Portions of a polycrystalline silicon layer disposed on An insulator are removed after diffusing donor impurities into and through the regions to be removed. The regions to be retained are either previously or simultaneously doped with acceptor impurities. The method provides improved Control of the size and the shape of the edges of the retained regions.
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