Delta-doped metal to semiconductor ohmic contacts

Details Delta-doped metal to semiconductor ohmic contacts Delta-doped metal to semiconductor ohmic contacts

H - Electricity

01

L

356/178

H01L 23/48 (2006.01) H01L 21/203 (2006.01) H01L 29/36 (2006.01) H01L 29/45 (2006.01) H01S 5/042 (2006.01)

Patent

CA 1260626

-8- A non-alloyed ohmic contact in gallium arsenide is described wherein a plurality of delta-doped monolayers (e.g. 13, 15,17,19 and 21) are placed at a predetermined distance from each other and from the metal to semiconductor interface (e.g. at 23) of the contact (e.g. 24, 25). The predetermined distance is chosen to keep the tunneling barrier extremely thin. In the embodiment shown, silicon is used as a dopant in the gallium arsenide material but other elements from groups II, IV and VI of the periodic table of elements may be used in otherIII-V semiconductor substrates.

538948

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