Delta doped silicon carbide metal-semiconductor field effect...

Details Delta doped silicon carbide metal-semiconductor field effect... Delta doped silicon carbide metal-semiconductor field effect...

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 21/338 (2006.01) H01L 29/36 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2464110

The present invention provides a unit cell of a metal-semiconductor field- effect transistor (MESFET). The unit cell of the MESFET includes a delta doped silicon carbide MESFET having a source (13), a drain 817) and a gate (24). The gate (24) is situated between the source (13) and the drain (17) and extends into a doped channel layer (16) of a first conductivity type. Regions of silicon carbide adjacent to the source (13) and the drain (17) extend between the source (13) and the gate and the drain (17) and the gate (24), respectively. The regions of silicon carbide have carrier concentrations that are greater than a carrier concentration of the doped channel layer (16) and are spaced apart from the gate (24).

L'invention concerne un motif élémentaire d'un transistor métallique à effet de champ (MESFET). Ledit motif cellulaire du MESFET comprend du carbure de silicium dopé delta comportant une source (13), un drain (17), et un portillon (24). Ledit portillon (24) est situé entre la source (13) et le drain (17) et s'étend sur une couche de canal dopé (16) d'un premier type de conductivité. Des zones de carbure de silicium adjacentes à la source (13) et au drain (17) s'étendent entre la source (13) et le portillon et entre le drain (17) et le portillon (24), respectivement. Les zones de carbure de silicium contiennent des concentrations de porteurs plus élevées qu'une concentration de porteurs de la couche de canal dopé (16). Lesdites zones sont séparées du portillon (24).

Affiliated with

Also associated with

Rating

Delta doped silicon carbide metal-semiconductor field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Delta doped silicon carbide metal-semiconductor field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Delta doped silicon carbide metal-semiconductor field effect... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1958506