Dense dynamic memory cell structure and process

Details Dense dynamic memory cell structure and process Dense dynamic memory cell structure and process

G - Physics

11

C

352/81

G11C 11/34 (2006.01) H01L 21/762 (2006.01) H01L 23/535 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1183954

ABSTRACT Dense Dynamic Memory Cell Structure and Process A dynamic memory is provided having a cell with an improved structure and made by an improved process which substantially reduces the capacitance of the bit/sense line connected to the cell. The cell has one field effect transistor and a storage node, and the cell structure includes a thick insulating segment located under a portion of a conductive layer or field shield and under a portion of the gate electrode of the transistor, while extending over the entire diffusion region of the bit/sense line and over substantially the entire depletion region surrounding the bit/sense line diffusion region.

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