Dense-plasma etching of inp-based materials using chlorine...

Details Dense-plasma etching of inp-based materials using chlorine... Dense-plasma etching of inp-based materials using chlorine...

H - Electricity

01

L

H01L 21/306 (2006.01)

Patent

CA 2400765

A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N2) gas. Etching of InP-based semiconductors using an appropriate C12/N2 mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.

La présente invention concerne un procédé de gravure à sec de semiconducteurs qui permet d'obtenir une gravure profonde, lisse et verticale de matières à base de phosphure d'indium grâce à un plasma chloré auquel on ajoute un azote gazeux (N¿2?). En gravant des semiconducteurs à base de phosphure d'indium à l'aide d'un mélange de Cl¿2?/N¿2? approprié sans ajouter de gaz supplémentaires, on obtient de meilleures morphologie et anisotropie de surface et des vitesses de gravures améliorées.

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