Deposition feedstock and dopant materials useful in the...

H - Electricity – 01 – L

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345/22, 204/96.3

H01L 31/18 (2006.01) C23C 16/24 (2006.01) C30B 31/00 (2006.01) H01L 31/02 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1332343

ABSTRACT Compounds having the formula (MX3)n M'X4n wherein M and M' are different Group 4A atoms selected from the group of silicon, germanium and lead, one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula (SiX3)m L X3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. Dopants having the formula YJX2 wherein Y is halogen or carbonyl, J is a Group 3A atom and X is hydrogen, halogen or mixtures thereof, are useful in the formation of positively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices. -1-

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