Deposition of silicon oxide films using alkylsilane liquid...

C - Chemistry – Metallurgy – 23 – C

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117/86

C23C 16/40 (2006.01)

Patent

CA 1337033

A chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325°C. to about 700°C. in avacuum having a pressure of from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, arylsilane and aralkylsilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 2 - 6 carbons. and oxygen or carbon dioxide into the vacuum.

615119

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