C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/86
C23C 16/40 (2006.01)
Patent
CA 1337033
A chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325°C. to about 700°C. in avacuum having a pressure of from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, arylsilane and aralkylsilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 2 - 6 carbons. and oxygen or carbon dioxide into the vacuum.
615119
Hochberg Arthur Kenneth
O'meara David Lillis
Air Products And Chemicals Inc.
Mcfadden Fincham
LandOfFree
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