C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.1
C30B 25/00 (2006.01)
Patent
CA 1059880
ABSTRACT OF THE DISCLOSURE Solid layer semiconductor compositions are depos- ited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by ap- plication of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions comprising elements selected from the group consisting of Pb, Sn, Ge, Te, Se, Hg and Cd.
303106
Francombe Maurice H.
Noreika Alexander J.
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