C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/06 (2006.01) C23C 16/08 (2006.01) C23C 16/14 (2006.01) H01L 21/285 (2006.01)
Patent
CA 2055422
ABSTRACT A method of depositing tungsten films comprising heating a substrate to a temperature above 200°C in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF6 and organohydrosilanes into the reactor.
Fine Stephen M.
Garg Diwakar
Hochberg Arthur K.
Lagendijk Andre
Roberts David A.
Air Products And Chemicals Inc.
Mcfadden Fincham
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