Deposition of tungsten films from mixtures of tungsten...

C - Chemistry – Metallurgy – 23 – C

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C23C 16/06 (2006.01) C23C 16/08 (2006.01) C23C 16/14 (2006.01) H01L 21/285 (2006.01)

Patent

CA 2055422

ABSTRACT A method of depositing tungsten films comprising heating a substrate to a temperature above 200°C in a chemical vapor deposition reactor, flowing a stream of carrier gas over the substrate in the reactor, and simultaneously introducing mixtures of WF6 and organohydrosilanes into the reactor.

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