Deposition of tungsten on silicon in a non-self-limiting cvd...

Details Deposition of tungsten on silicon in a non-self-limiting cvd... Deposition of tungsten on silicon in a non-self-limiting cvd...

C - Chemistry, Metallurgy

23

C

356/149, 117/83,

C23C 16/04 (2006.01) C23C 16/14 (2006.01) H01L 21/285 (2006.01) H01L 21/768 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1308496

YO9-87-091 DEPOSITION OF TUNGSTEN ON SILICON IN NON-SELF-LIMITING CVD PROCESS ABSTRACT OF THE DISCLOSURE A method of depositing tungsten on a substrate utilizing silicon reduction wherein the process is non-limiting as to the thickness of silicon that may be converted to tungsten. A silicon substrate is provided with at least one area of silicon material having a predetermined thickness and the substrate is exposed to a tungsten hexafluoride gas flow in a chemical vapor deposition environment. By adjusting the WF6 gas flow rate and the CVD process parameters, such as pressure, temperature and deposition time, the thickness of silicon converted to tungsten can be adjusted in order to convert the entire thickness. A novel structure having a midgap tungsten gate and tungsten source and drain metallized layers is also disclosed.

580787

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