Deposition process monitoring and control system

Details Deposition process monitoring and control system Deposition process monitoring and control system

C - Chemistry, Metallurgy

23

C

204/96.04, 204/1

C23C 14/54 (2006.01) C23C 14/00 (2006.01) H01J 37/32 (2006.01) H01J 37/34 (2006.01)

Patent

CA 1119554

ABSTRACT OF THE DISCLOSURE A system is provided for monitoring sputtering deposition parameters and through closed-loop control achieving rapid modification of the parameters to maintain or to obtain a film composition. In reactive sputtering, the sputtering chamber has individual gas pressure controllers for the various gases to be added to the chamber. A holder for a substrate on which the film is to be deposited includes a heater with adjustable control. A differentially pumped quadrupole mass analyzer interconnects with the chamber bottom to receive a sample of plasma ions, measures the ionized species existing in the plasma and generates signals related to the film composition. A controller responsive to the quadrupole analyzer actuation adjusts the pressure of the one or more reactive or non-reactive gases being provided to the chamber, and/or controls other deposition parameters, such as substrate temperature or other plasma features. - 1 -

327450

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