H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/25
H01L 29/92 (2006.01) H01L 29/93 (2006.01)
Patent
CA 1175951
K 03 UV-5IP DEPTHWISE-ORIENTED INTEGRATED CIRCUIT CAPACITORS AND METHOD OF MAKING ABSTRACT OF THE DISCLOSURE A depthwise-oriented capacitor comprises a cluster of elon- gated oppositely-doped conductive regions extending depthwise into a semiconductor substrate. Interspersed p-type and n-type regions form opposite poles of the capacitor. The conductive regions are narrow parallel plates or cylindrical columns doped in concentrations suffi- cient to establish metal-like electric field boundary conditions. Such regions are ion implanted or diffused into the substrate bulk along a crystallographic channel thereof to maximize ion penetration. The substrate is either near-intrinsic or semi-insulative so that the semiconductor material between the conductive regions is substantially nonconductive. The oppositely-doped regions are spaced to deplete the intervening nonconductive region of free carriers over the operational voltage range of the capacitor but not exceed the depleted breakdown voltage of such region. The conductive regions are geometrically arranged in hexagonal or square honeycomb patterns, so that the nearest neighbors of each conductive region of one dopant type are of the opposite dopant type. Link trimmable surface conductors intercon- nect the conductive regions of one dopant type. The oppositely-doped conductive regions are interconnected either by surface conductors or by doped conductors in the bulk of the substrate. Capacitance values can be changed during manufacture without mask alterations by control- ling the depth of the conductive regions.
395358
Blakemore John S.
Carlson F. Paul
Eror Nicholas G.
Oregon Graduate Center For Study And Research
Ridout & Maybee Llp
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