Detector for one or several polluting gases and use thereof

Details Detector for one or several polluting gases and use thereof Detector for one or several polluting gases and use thereof

G - Physics

01

N

G01N 27/414 (2006.01) G01N 33/00 (2006.01)

Patent

CA 2334849

The invention concerns a detector in the form of a field-effect transistor (13) arranged in a chamber (14). The transistor (13) electroattractive part is formed by a macromolecular material layer (4). The latter is exposed to a mixture containing at least one polluting gas, such as O¿3? and NO¿2?, which causes it to be doped. A measuring device (10) comprises means for measuring the intensity of the current (I¿DS?) which circulates between the transistor drain electrode (5) and source electrode (6) at least at one given time after the detector has been initialised, said at least polluting gas presence causing the layer (4) material to be doped depending on the concentration in polluting gas, the current (I¿DS?)intensity and the intensity gradient being related to the concentration in polluting gas.

Ce détecteur se présente sous la forme d'un transistor à effet de champ (13) qui est disposé dans une enceinte (14). La partie électroactive du transistor (13) est formée par une couche de matériau moléculaire (4). Cette dernière est exposée à un mélange de gaz contenant au moins un gaz polluant, tel que O3 et NO2, qui conduit à son dopage. Un dispositif de mesure (10) comporte des moyens de mesure de l'intensité du courant (IDS) qui circule entre l'électrode de drain (5) et l'électrode de source (6) du transistor à au moins un instant donné après l'initialisation du détecteur, la présence de cet au moins un gaz polluant provoquant le dopage du matériau de la couche (4) selon la concentration en gaz polluant, l'intensité et la pente de la croissance de l'intensité dudit courant (IDS) étant liées à la concentration en gaz polluant.

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