Device and method for accurate etching and removal of thin film

Details Device and method for accurate etching and removal of thin film Device and method for accurate etching and removal of thin film

H - Electricity

01

L

H01L 21/306 (2006.01) H01L 21/00 (2006.01) H01L 21/311 (2006.01)

Patent

CA 2104071

New device and method are described for accurate etching and removal of thin layer by controlling the surface residence time, thickness and composition of reactant containing film. Etching of silicon dioxide at low pressure using a quartz crystal microbalance is illustrated. Usefulness of the invention in the manufacture of microelectronic devices is shown.

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