Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

B - Operations, Transporting

23

K

204/96.05

B23K 1/00 (2006.01) C23F 4/00 (2006.01) H01L 21/3065 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1121305

Harshbarger, W.R. 2-23-6-5 DEVICE FABRICATION BY PLASMA ETCHING Abstract of the Disclosure High density fine-line integrated structure fabrication is expedited by use of plasma etching systems which assure straight vertical walls (absence of undercutting). Critical to the systems is choice of appropriate plasma chemistry. Appropriate systems are characterized by inclusion of recombination centers, as well as active etchant species. Recombination centers which effectively terminate etchant species lifetime in the immediate vicinity of resist walls afford means for controlling etching anisotropy. Use is foreseen in large scale integrated circuitry (LSI) and is expected to be of particular interest for extremely fine design rules, i.e., in Very Large Scale Integrated circuitry.

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