Device fabrication by plasma etching

Details Device fabrication by plasma etching Device fabrication by plasma etching

H - Electricity

01

L

204/96.05

H01L 21/306 (2006.01) C23F 4/00 (2006.01) H01L 21/3065 (2006.01) H05K 3/08 (2006.01)

Patent

CA 1124208

1 MOGAB J C.J. 5 DEVICE FABRICATION BY PLASMA ETCHING Abstract of the Disclosure Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of fluorocarbon-halogenation combinations as exemplified by CF3C1. The use of such combinations results in an improved control over the etching of silicon-containing surfaces, such as discrimination between the silicon-containing compositions (e.g., elemental Si, doped and undoped, or as a part on an intermetallic compound, such as a silicide) versus true silicon compounds (e.g. SiO2, SiNX etc.), and control over direction of etching relative to a vertical pro- file of walls of the portion or region being etched.

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