Device fabrication by plasma etching of aluminum rich surfaces

Details Device fabrication by plasma etching of aluminum rich surfaces Device fabrication by plasma etching of aluminum rich surfaces

B - Operations, Transporting

23

K

204/96.05

B23K 1/00 (2006.01) C23F 4/00 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1121306

1 LEVINSTEIN, H.J. 24-2 DEVICE FABRICATION BY PLASMA ETCHING OF ALUMINUM RICH SURFACES Abstract of the Disclosure Integrated circuit fabrication, e.g., silicon LSI, is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of halide-halogen combinations as exemplified by BC13-Cl2.

332162

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