Device fabrication method involving deposition of...

Details Device fabrication method involving deposition of... Device fabrication method involving deposition of...

H - Electricity

01

L

356/149

H01L 21/285 (2006.01)

Patent

CA 1286798

Abstract A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material (e.g. 130 and 140;150) on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.

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