Device fabrication method using spin-on glass resins and...

G - Physics – 03 – F

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G03F 7/36 (2006.01) C03C 15/00 (2006.01) G03F 7/09 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1298761

- 19 - DEVICE FABRICATION METHOD USING SPIN-ON GLASS RESINS AND DEVICES FORMED THEREBY ABSTRACT A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate (e.g. 10) with a trilevel resist (e.g. 30) containing a spin-deposited substitute (e.g. 50) for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.

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