G - Physics – 03 – F
Patent
G - Physics
03
F
148/3.2
G03F 7/36 (2006.01) C03C 15/00 (2006.01) G03F 7/09 (2006.01) H01L 21/306 (2006.01)
Patent
CA 1298761
- 19 - DEVICE FABRICATION METHOD USING SPIN-ON GLASS RESINS AND DEVICES FORMED THEREBY ABSTRACT A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate (e.g. 10) with a trilevel resist (e.g. 30) containing a spin-deposited substitute (e.g. 50) for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.
500719
Miller David Anthony
Moran Joseph Michael
Taylor Gary Newton
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
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