Device fabrication through etching a substrate with plasma...

Details Device fabrication through etching a substrate with plasma... Device fabrication through etching a substrate with plasma...

H - Electricity

01

L

204/96.05, 148/3

H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1278768

Abstract This invention relates to a process for fabricating a device, including etching of a substrate with a chlorine- containing plasma. By adjusting the AC field conditions, i.e., by grounding the environment of the substrate being etched, a significant increase in etch selectivity is achieved. By applying a similar AC field adjustment to the reaction chamber surfaces, excellent etch uniformity is achieved in conjunction with excellent selectivity. Fig. 1.

497356

Affiliated with

Also associated with

Rating

Device fabrication through etching a substrate with plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device fabrication through etching a substrate with plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device fabrication through etching a substrate with plasma... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1212506