C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/34 (2006.01) H01J 37/34 (2006.01)
Patent
CA 2173891
In a device for applying thin layers to a substrate (10) by means of the cathode sputtering process in a vacuum chamber (1), through which the substrate (10) to be coated can be transported, hollow profiles (6, 7), which are supported by the walls of the vacuum chamber (1), are installed parallel to the plane of the cathode in the area between the cathode (12) and the anode (4, 5), through which profiles a coolant and process gas are conveyed, the hollow profiles (6, 7) being provided with openings (6e, 6e', .... ; 7e, 7e', .... ) transverse to the conduits to allow the process gas to escape into the vacuum chamber (1), where anodes (4,5), which are designed as profiled rails with an L-shaped cross section, extend with their short shanks (4a, 5a) over the hollow profiles (6, 7), on the tops of which profiles (6, 7) these shanks are also supported, and where multi-shanked diaphragms (8, 9) are provided, one of the shanks of which (8', 9') is designed as a hook, which extends over cooperating profiles attached to the process chamber walls (2, 3).
Marquardt Dietmar
Sauer Andreas
Schuhmacher Manfred
Winter Erwin
Balzers Und Leybold Deutschland Holding Ag
Dennison Associates
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