C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.55
C30B 19/00 (2006.01) C30B 19/06 (2006.01) C30B 19/10 (2006.01)
Patent
CA 1181328
12 ABSTRACT "Device for epitaxially providing a layer of semiconductor material" A device for the epitaxial provision of a layer of semiconductor material on a flat side of a substrate comprises a sliding mechanism which has a reser- voir holder with at least one reservoir open on its lower side 3 a slider closing the lower side of the reservoir holder and having at least one aperture to deposit melt from a reservoir of the reservoir holder, which device furthermore comprises a substrate holder in which at least one recess is provided for receiving a substrate. The sliding mechanism also comprises a melt receiving member which is present below the reservoir holder, the substrate holder being movable relative to the melt receiving member and during the movement can release an aperture in the melt deposition slider so as to deposit melt present in said aperture in the melt receiving member.
368004
Uniphase Opto Holdings Inc.
Van Steinburg C.e.
LandOfFree
Device for epitaxially providing a layer of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device for epitaxially providing a layer of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for epitaxially providing a layer of semiconductor... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1319400