Device for making a contact with a semiconductor element

Details Device for making a contact with a semiconductor element Device for making a contact with a semiconductor element

H - Electricity

01

L

356/146, 345/33

H01L 23/12 (2006.01) H01L 29/45 (2006.01) H01L 33/00 (2006.01) H01S 5/22 (2006.01)

Patent

CA 1105599

ABSTRACT OF THE DISCLOSURE: A device and a method for making a contact on a gallium arsenide face of a semiconductor element. The device comprises successively a first layer of titanium or chromium forming with the semiconductor an ohmic contact of low resistivity and partly covering the face; a layer of titanium or palladium completely covering the first layer and a layer of gold, partly covering the first layer and at least a part of the face and forming with the face a contact of much higher resistivity The layer of titanium or palladium forms a barrier layer between the two other layers. The invention is particularly applicable to laser diodes.

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