Device having strain induced region

Details Device having strain induced region Device having strain induced region

H - Electricity

01

L

345/27, 148/3.7

H01L 31/10 (2006.01) H01L 31/0352 (2006.01) H01L 31/107 (2006.01)

Patent

CA 1282671

- 12 - DEVICE HAVING STRAIN INDUCED REGION Abstract This invention concerns with devices having a strain-induced region. Such devices include a substrate (e.g. 1) and disposed thereon a first cladding layer (e.g. 3), an interleaved region (e.g. 5) of alternating first and second compositions comprising GeXsi1-x and GeySi1-y, respectively, having different lattice constants and a lattice mismatch, wherein x is greater than y and 0.0 and less than or equal to 1.0 and y is greater than or equal to 0.0 and less than 1Ø Said mismatch is accomodated by strain which changes the bandgap from that of bulk compositions, said values of x and y being selected to provide for a desired bandgap.

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