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H01L 31/10 (2006.01) G01T 1/24 (2006.01) G01T 1/29 (2006.01) H01L 31/02 (2006.01) H01L 31/101 (2006.01) H01L 31/115 (2006.01)
Patent
CA 1281440
DEVICE INCLUDING A RADIATION SENSOR Abstract Radiation-induced effects in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e.g., highly linear as well as highly nonlinear position sensors. Such devices include a structure of alternating layers of conductor and semiconductor materials, and electrical contacts are provided between which a radiation-induced voltage appears. Among suitable layer materials are silicon and titanium, and resulting devices are sensitive to electromagnetic as well as to particle radiation. (FIG. 2)
534427
Bethea Clyde G.
Brasen Daniel
Levine Barry Franklin
Willens Ronald Howard
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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