Devices and device fabrication with borosilicate glass

Details Devices and device fabrication with borosilicate glass Devices and device fabrication with borosilicate glass

C - Chemistry, Metallurgy

30

B

148/3.5

C30B 31/22 (2006.01) C03C 3/064 (2006.01) C03C 3/091 (2006.01) H01L 21/316 (2006.01) H01L 21/314 (2006.01)

Patent

CA 1321123

- 14 - DEVICES AND DEVICE FABRICATION WITH BOROSILICATE GLASS Abstract Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have highsilica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

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