Devices based on si/ge

Details Devices based on si/ge Devices based on si/ge

H - Electricity

01

L

H01L 21/285 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2050649

- 10- DEVICES BASED ON Si/Ge Abstract High speed transistor devices for use in high speed circuitry such as laser driver circuitry are formed by utilizing a high temperature deposition process. For example, chemical vapor deposition performed at temperatures on the order of900°C for deposition of Si/Ge materials leads to bipolar devices having excellent properties. In particular, such devices are mechanically stable and are relatively defect free.

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