Devices having shallow junctions

Details Devices having shallow junctions Devices having shallow junctions

H - Electricity

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356/178

H01L 29/08 (2006.01) H01L 21/225 (2006.01) H01L 21/8238 (2006.01) H01L 27/092 (2006.01) H01L 29/36 (2006.01)

Patent

CA 1311862

- 10- Abstract In CMOS based integrated circuits, stricter design rules require source and drain junctions shallower than 2500 .ANG.. By using a specific device configuration, a shallow junction is obtainable while resistance to latch-up is improved and other electrical properties, e.g., low leakage current, are maintained. To achieve this result the p-channel device should have an activation energy of the junction reverse leakage current region less than 1.12 eV, with a junction dopant region shallower than 1200 A and a monotonically decreasing junction dopant profile.

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