Devices including a layer of amorphous silicon

Details Devices including a layer of amorphous silicon Devices including a layer of amorphous silicon

H - Electricity

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356/153, 96/175,

H01L 31/04 (2006.01) C23C 16/505 (2006.01) H01L 21/205 (2006.01) H01L 29/04 (2006.01) H01L 29/167 (2006.01) H01L 31/07 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1090454

Abstract A device including a layer of amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a halogen selected from the group consisting of chlorine, bromine and iodine. - 1 -

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