H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/33, 345/39
H01S 3/02 (2006.01) H01S 3/06 (2006.01) H01S 3/098 (2006.01) H01S 5/028 (2006.01) H01S 5/227 (2006.01) H01S 5/12 (2006.01) H01S 5/125 (2006.01)
Patent
CA 1280819
ABSTRACT: DFB laser provided with an anti-reflection layer. A semiconductor laser of the distributed feed- back (DFB or DBR) type, the laser being bounded in the longitudinal direction by end surfaces (5,6) at right angles to the active region and at least one of these end faces (5) being provided with an anti-reflection layer (8) in order to suppress Fabry-Pérot modes. According to the invention, in order to obtain an optimum effect, an anti-reflection layer of hafnium oxide is used. The invention is used more particularly with great advantage in lasers of the DCPBH (Double Channel Planar Buried Hetero-structure) type. Fig. 1.
545809
Krekels Henricus C.j.
Kuindersma Pieter Ids
Fetherstonhaugh & Co.
Krekels Henricus C.j.
Kuindersma Pieter Ids
N.v. Philips Gloeilampenfabrieken
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