C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
117/85, 148/2.1,
C30B 29/04 (2006.01) C30B 25/00 (2006.01) C30B 25/14 (2006.01)
Patent
CA 1318226
RD-17,340 IMPROVED DIAMOND CRYSTAL GROWTH PROCESS ABSTRACT OF THE DISCLOSURE The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.
602237
Company General Electric
Gasworth Steven M.
Oldham And Wilson
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